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dc.contributor.author |
Taqi, A. |
|
dc.contributor.author |
Diouri, J. |
|
dc.date.accessioned |
2017-05-31T05:24:17Z |
|
dc.date.available |
2017-05-31T05:24:17Z |
|
dc.date.issued |
2012 |
|
dc.identifier.citation |
A theoretical model for exciton binding energies in rectangular
and parabolic spherical finite quantum dots / A. Taqi, J. Diouri // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 4. — С. 365-369. — Бібліогр.: 9 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
|
dc.identifier.other |
PACS 71.35.-y; 73.21.Fg, La |
|
dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/118728 |
|
dc.description.abstract |
. Using the variational method in real space and the effective-mass theory, we
present quite an advanced semi-analytic approach susceptible for calculating the binding
energy Eb of Wannier excitons in semiconductor quantum dot structures with rectangular
and parabolic shapes of the confining potential in the so-called strong-confinement
regime. Illustration is given for CdS, ZnSe, CdSe, GaAs structures of crystallites for both
rectangular and parabolic quantum dots, and it displays a very good agreement between
the experimental and theoretical results reported in literature. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
A theoretical model for exciton binding energies in rectangular and parabolic spherical finite quantum dots |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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