Perspective of surface modification of CdTe single crystal substrate for creation of photosensitive barrier structures

dc.contributor.author	Makhniy, V.P.
dc.contributor.author	Skrypnyk, N.V.
dc.contributor.author	Boyko, Yu.N.
dc.date.accessioned	2017-05-30T19:50:33Z
dc.date.available	2017-05-30T19:50:33Z
dc.date.issued	2009
dc.identifier.citation	Perspective of surface modification of CdTe single crystal substrate for creation of photosensitive barrier structures / V.P. Makhniy, N.V. Skrypnyk, Yu.N. Boyko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 143-146. — Бібліогр.: 12 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 73.40.Cg, Gk, Lq
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118691
dc.description.abstract	Analyzed in this paper is the influence of various modifications of substrate surface in n-CdTe single crystals (laser, thermal and photothermal) on electric and photoelectric properties of diode structures based on them.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Perspective of surface modification of CdTe single crystal substrate for creation of photosensitive barrier structures	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA