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dc.contributor.author Vlaskin, V.
dc.contributor.author Vlaskina, S.
dc.contributor.author Berezhinsky, L.
dc.contributor.author Svechnikov, G.
dc.date.accessioned 2017-05-30T19:49:44Z
dc.date.available 2017-05-30T19:49:44Z
dc.date.issued 2009
dc.identifier.citation Reliability of AC thick-film electroluminescent lamps / V. Vlaskin, S. Vlaskina, L. Berezhinsky, G. Svyechnikov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 173-177. — Бібліогр.: 5 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS 78.60.Fi
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/118690
dc.description.abstract The reliability of AC thick-film EL devices has been studied. The AC thickfilm EL devices were fabricated by Novatech Inc. using the industrial print screen technology. The analysis of reasons for failure has been proposed. The dependence of EL lamp parameters on physical properties of the device EL layers was found. Our analysis of the breakdown spot showed that improvement of reliability can be reached using the additional dielectric layer between the phosphor layer and transparent electrode, high concentration of phosphor powder 70 % and binder 30 %, balanced resistance between the electric circuit and EL lamp. The thickness of the phosphor layer was equal to H = (1 + √3/2)D (hexagonal packing), where D is the mean diameter of phosphor particles. The reliability dependence of EL lamp on a water adsorption property of packaging material was revealed. uk_UA
dc.description.sponsorship This work was supported by Research Development center of the EL-Korea Corporation and the Novatech Inc. uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Reliability of AC thick-film electroluminescent lamps uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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