Electrophysical properties of SmxPb₁₋xTe solid solutions

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2009, том 12
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Semicond. Physics Quantum Electronics & Optoelectronics, 2009, № 2
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dc.contributor.author	Hasanov, H.A.
dc.date.accessioned	2017-05-30T19:43:16Z
dc.date.available	2017-05-30T19:43:16Z
dc.date.issued	2009
dc.identifier.citation	Electrophysical properties of SmxPb₁₋xTe solid solutions / H.A. Hasanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 135-137. — Бібліогр.: 5 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 72.10.Di, 72.20.Dp, My
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118688
dc.description.abstract	The electrophysical properties of SmxPb₁₋xTe (x ≤ 0.08) solid solutions have been investigated. The electric conductivity, Hall coefficient and Hall mobility of charge carriers in the temperature range 80 to 800 К have been measured. The mechanism of charge carrier scattering in solid solutions has been ascertained. It is established that increase of samarium content and simultaneous participation of interacting Sm²⁺ and Sm³⁺ ions in the transfer process lead to decrease in electric conductivity. The change of conductivity type from p- to n-type means that obtained solid solutions are partly compensated semiconductors.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Electrophysical properties of SmxPb₁₋xTe solid solutions	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA