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dc.contributor.author |
Hasanov, H.A. |
|
dc.date.accessioned |
2017-05-30T19:43:16Z |
|
dc.date.available |
2017-05-30T19:43:16Z |
|
dc.date.issued |
2009 |
|
dc.identifier.citation |
Electrophysical properties of SmxPb₁₋xTe solid solutions / H.A. Hasanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 2. — С. 135-137. — Бібліогр.: 5 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
|
dc.identifier.other |
PACS 72.10.Di, 72.20.Dp, My |
|
dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/118688 |
|
dc.description.abstract |
The electrophysical properties of SmxPb₁₋xTe (x ≤ 0.08) solid solutions have
been investigated. The electric conductivity, Hall coefficient and Hall mobility of charge
carriers in the temperature range 80 to 800 К have been measured. The mechanism of
charge carrier scattering in solid solutions has been ascertained. It is established that
increase of samarium content and simultaneous participation of interacting Sm²⁺ and
Sm³⁺ ions in the transfer process lead to decrease in electric conductivity. The change of
conductivity type from p- to n-type means that obtained solid solutions are partly
compensated semiconductors. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Electrophysical properties of SmxPb₁₋xTe solid solutions |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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