Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model

dc.contributor.author	Alisultanov, Z.Z.
dc.date.accessioned	2017-05-30T19:14:45Z
dc.date.available	2017-05-30T19:14:45Z
dc.date.issued	2013
dc.identifier.citation	Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model / Z.Z. Alisultanov // Физика низких температур. — 2013. — Т. 39, № 7. — С. 767–770. — Бібліогр.: 22 назв. — англ.	uk_UA
dc.identifier.issn	0132-6414
dc.identifier.other	PACS: 68.43.–h, 72.80.Vp, 65.80.Ck
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118667
dc.description.abstract	In this paper we have investigated thermoelectric effect in the epitaxial graphene on a semiconductor substrate using a simple model. We have obtained the expressions for static conductance and thermopower of the epitaxial graphene. The thermopower of the epitaxial graphene can be abnormally large near the edges of the semiconductor band gap.	uk_UA
dc.description.sponsorship	Author thanks the Federal Lezghin National and Cultural Autonomy (FLNCA) for the support and A.A. Varlamov for useful discussion.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України	uk_UA
dc.relation.ispartof	Физика низких температур
dc.subject	Электронные свойства проводящих систем	uk_UA
dc.title	Thermoelectric effect in single layer epitaxial graphene formed on semiconductor substrate. Simple analytical model	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA