Наукова електронна бібліотека
періодичних видань НАН України

Properties of junction diodes under conditions of bisotropic strains

Репозиторій DSpace/Manakin

Показати простий запис статті

dc.contributor.author Borblik, V.L.
dc.date.accessioned 2017-05-30T17:19:15Z
dc.date.available 2017-05-30T17:19:15Z
dc.date.issued 2009
dc.identifier.citation Properties of junction diodes under conditions of bisotropic strains / V.L. Borblik // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 42-46. — Бібліогр.: 20 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS 77.65.Ly, 78.66.-w, 79.60.Jv, 85.30.Kk
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/118608
dc.description.abstract In consideration of influence of technological strains on characteristics of junction diodes located on surface of silicon wafers, biaxial character of such strains has taken into account. The cases of (001)- and (111)-oriented silicon wafers on whose surface the diodes are located as well as longitudinal (in plane of the wafer) and transversal (perpendicular to it) diode current flow have been considered. It is shown that at small strains, the diodes located on the surface of (111)-Si are less subjected (as a whole) to their influence. Furthermore, the change in the intrinsic carrier concentration has been assessed in (001)-Si at very large bisotropic strains. The concentration is shown to increase by several orders of magnitude irrespective of the strain sign. uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Properties of junction diodes under conditions of bisotropic strains uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA

Файли у цій статті

Ця стаття з'являється у наступних колекціях

Показати простий запис статті


Розширений пошук


Мій обліковий запис