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dc.contributor.author |
Aleskerov, F.K. |
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dc.contributor.author |
Kahramanov, S.K. |
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dc.contributor.author |
Asadov, М.М. |
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dc.contributor.author |
Kahramanov, K.S. |
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dc.date.accessioned |
2017-05-30T17:15:00Z |
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dc.date.available |
2017-05-30T17:15:00Z |
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dc.date.issued |
2009 |
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dc.identifier.citation |
Bi₂Te₃-хSex 〈Ag〉 (х = 0.04) nanocrystal formation / F.K. Aleskerov, S.K. Kahramanov, М.М. Asadov, K.S. Kahramanov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 1. — С. 72-76. — Бібліогр.: 4 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
PACS 81.05.Hd, 81.05.Ys, 81.10.Dn |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/118605 |
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dc.description.abstract |
The results of experimental researches dealing with formation of nanometricsize doped (Ag) layers on the surface (0001) between Te⁽¹⁾–Te⁽¹⁾ telluride quintet layers in Bi₂Te₃-хSex 〈Ag〉 (х = 0.04) crystals under directed crystallization has been submitted. During the crystal growth as result of impurity diffusion along a surface (0001), accumulation, redistribution and nanocrystal formation between Te⁽¹⁾–Te⁽¹⁾ layers occur. By the method of atomic-force microscopy, the Bi₂Te₃-хSex 〈Ag〉 crystal images with nanolayers were obtained. Being based on experimental data, the fractal dimension of nanocrystalline layers was estimated. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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dc.title |
Bi₂Te₃-хSex 〈Ag〉 (х = 0.04) nanocrystal formation |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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