Photoluminescence of As₂S₃ doped with Cr and Yb

Домашня сторінка
→
Фізико-технічні та математичні науки
→
Відділення фізики і астрономії
→
Semiconductor Physics Quantum Electronics & Optoelectronics
→
Semiconductor Physics Quantum Electronics & Optoelectronics, 2014, том 17
→
Semicond. Physics Quantum Electronics & Optoelectronics, 2014, № 4
→
Переглянути статтю

dc.contributor.author	Stronski, A.V.
dc.contributor.author	Paiuk, O.P.
dc.contributor.author	Strelchuk, V.V.
dc.contributor.author	Nasieka, Iu.M.
dc.contributor.author	Vlček, M.
dc.date.accessioned	2017-05-30T10:24:25Z
dc.date.available	2017-05-30T10:24:25Z
dc.date.issued	2014
dc.identifier.citation	Photoluminescence of As₂S₃ doped with Cr and Yb / A.V. Stronski, O.P. Paiuk, V.V. Strelchuk, Iu.M. Nasieka, M. Vlcek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 341-345. — Бібліогр.: 16 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 07.20.Mc, 65.60+a, 75.30.Hx, 78.30.Ly, 78.55.Qr
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118420
dc.description.abstract	The results of experimental researches of photoluminescence spectra in As₂S₃ glasses obtained by doping of Cr and Yb ions to As–S host matrix followed by Raman and calorimetric studies as well as low-temperature magnetization measurements have been given. Possible mechanisms of obtained effects are discussed.	uk_UA
dc.description.sponsorship	The research was supported by the project FP–7 SECURE–R21.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Photoluminescence of As₂S₃ doped with Cr and Yb	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA