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dc.contributor.author Akinlami, J.O.
dc.contributor.author Bolaji, F.M.
dc.date.accessioned 2017-05-29T18:04:06Z
dc.date.available 2017-05-29T18:04:06Z
dc.date.issued 2012
dc.identifier.citation Complex index of refraction of indium nitride InN / J.O. Akinlami, F.M. Bolaji // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С 276-280. — Бібліогр.: 25 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS 78.20.Ci, 78.20.-e, 78.40.-q
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/118324
dc.description.abstract We have investigated the complex index of refraction of Indium Nitride (InN). We obtained refractive index which has the maximum value 2.59 at the photon energy 5.30 eV, the extinction coefficient which has the maximum value 0.86 at the photon energy 5.30 eV, the dielectric constant, the real part of the complex dielectric constant with the peak value 5.90 at the photon energy 5.30 eV and the imaginary part of the complex dielectric constant with the maximum value 4.48 at the photon energy 5.30 eV, the transmittance with the maximum value 0.1402 at the photon energy 5.3 0eV, the absorption coefficient which has its maximum value 86.0 at the photon energy 11.50 eV and reflection coefficient which with the maximum value 0.49 at the photon energy 5.3 eV. Thus, InN has the potential to operate optimally in a photonic device at the photon energy 5.30 eV. uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Complex index of refraction of indium nitride InN uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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