Electrophysical characteristics of large-size αSi-Si(Li) detector heterostructures

dc.contributor.author	Muminov, R.A.
dc.contributor.author	Saymbetov, A.K.
dc.contributor.author	Toshmurodov, Yo.K.
dc.date.accessioned	2017-05-29T17:38:07Z
dc.date.available	2017-05-29T17:38:07Z
dc.date.issued	2012
dc.identifier.citation	Electrophysical characteristics of large-size αSi-Si(Li) detector heterostructures / R.A. Muminov, A.K. Saymbetov, Yo.K. Toshmurodov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 3. — С. 285-287. — Бібліогр.: 7 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 73.40.Lq, 73.40.Qv
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118318
dc.description.abstract	Electrophysical properties of large-size detector heterostructures based on a αSi-Si(Li) have been investigated in this paper. The results prove that these detector heterostructures are more effective as compared to the structures obtained using the conventional diffusion technique. One can certainly predict availability of highly effective current-voltage and capacitance-voltage characteristics in these structures.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Electrophysical characteristics of large-size αSi-Si(Li) detector heterostructures	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA