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dc.contributor.author |
Boyko, V.G. |
|
dc.contributor.author |
Zayats, N.S. |
|
dc.date.accessioned |
2017-05-29T16:36:53Z |
|
dc.date.available |
2017-05-29T16:36:53Z |
|
dc.date.issued |
2012 |
|
dc.identifier.citation |
Application of ferroelectrics to create electroluminescent
indicators of temperature / V.G. Boyko, N.S. Zayats // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 162-165. — Бібліогр.: 10 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
|
dc.identifier.other |
PACS 77.55.fe, hd; 77.80.B-, 78.60.Fi |
|
dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/118303 |
|
dc.description.abstract |
In this article, temperature dependences of brightness of thin film
electroluminescent emitters (TFELE) based on metal-dielectric-semiconductor-metal
(MDSM) structures with ceramic ferroelectric dielectric have been considered. Their
comparable analysis with the temperature dependence of dielectric themself has been
made. Literature data concerning this question have been briefly discussed. The
conclusion about the possibility to use ferroelectrics (ceramics based on BaTiO₃, AlN,
LiNbO₃) with a pronounced thermal dependence of capacitance characteristics to
produce the temperature light indicators has been made. The design of a new temperature
sensor can be realized in several ways. For example, in the form of the scales with a
moving luminous column or separate lighting dots, depending on how clearly Curie
peaks are observed on the temperature curves of dielectric permittivity. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Application of ferroelectrics to create electroluminescent indicators of temperature |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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