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dc.contributor.author |
Kryuchenko, Yu.V. |
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dc.contributor.author |
Sachenko, A.V. |
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dc.contributor.author |
Bobyl, A.V. |
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dc.contributor.author |
Kostylyov, V.P. |
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dc.contributor.author |
Romanets, P.N. |
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dc.contributor.author |
Sokolovskyi, I.O. |
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dc.contributor.author |
Shkrebti, A.I. |
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dc.contributor.author |
Terukov, E.I. |
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dc.date.accessioned |
2017-05-29T14:56:06Z |
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dc.date.available |
2017-05-29T14:56:06Z |
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dc.date.issued |
2012 |
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dc.identifier.citation |
Efficiency a-Si:H solar cell. Detailed theory / Yu.V. Kryuchenko, A.V. Sachenko, A.V. Bobyl, V.P. Kostylyov, P.N. Romanets, I.O. Sokolovskyi, A.I. Shkrebtii, E.I. Terukov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 2. — С. 91-116. — Бібліогр.: 21 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
PACS 72.20.Jv, 73.40.Cg, 84.60.Jt, 85.30.De |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/118286 |
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dc.description.abstract |
We develop a detailed formalism to photoconversion efficiency η of hydrogenated amorphous silicon ( a-Si:H ) based solar cells with a contact grid. This efficient three-dimensional model allows firstly optimization of the p i n sandwich in terms of carrier mobilities, thickness of the layers, doping levels and others. Secondly, geometry of the grid fingers that conduct the photocurrent to the bus bars and ITO/SiO₂ layers has been optimized, and the effect of non-zero sun beam incidence angles has been included as well. The model allows optimization of the amorphous Si based solar cells in a wide range of key parameters. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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dc.title |
Efficiency a-Si:H solar cell. Detailed theory |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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