Carbides of A³B⁵ compounds – new class materials for opto- and microelectronics

Abstract

Discussed in this paper are options for replacing the virtual structure of SiC atoms with AlN compound. The Al₄C₃, AlNC and AlNOC compounds in vapor and solid epitaxial processes have been obtained as a result of carbothermic reduction. Analized is the role of precursors in the way of reducing the formation temperature for stable phases of aluminum oxynitrocarbide during epitaxy of aluminum nitride in the presence of carbon atoms. The dependence on preparation conditions for the aluminum single oxycarbide crystal structure has been explored. The influence of partial 2H-SiC crystal structure on the state of the single oxycarbide crystal structure was determined. The semiconductor AlNOC has been experimentally obtained.