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Effect of chemical modification of thin C₆₀ fullerene films on the fundamental absorption edge

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dc.contributor.author Dmitruk, N.L.
dc.contributor.author Borkovskaya, O.Yu.
dc.contributor.author Havrylenko, T.S.
dc.contributor.author Naumenko, D.O.
dc.contributor.author Petrik, P.
dc.contributor.author Meza-Laguna, V.
dc.contributor.author Basiuk, E.V.
dc.date.accessioned 2017-05-29T13:30:42Z
dc.date.available 2017-05-29T13:30:42Z
dc.date.issued 2010
dc.identifier.citation Effect of chemical modification of thin C₆₀ fullerene films on the fundamental absorption edge / N.L. Dmitruk, O.Yu. Borkovskaya, T.S. Havrylenko, D.O. Naumenko, P. Petrik, V. Meza-Laguna, E.V. Basiuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 180-185. — Бібліогр.: 21 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS 78.40.Ri
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/118234
dc.description.abstract Fullerene C₆₀ films were grown using physical vapor deposition on Si substrates at room temperature. Then chemical modification with cross-linking these films was performed using the reaction with 1,8-octanediamine (DA) or octane-1,8- dithiol (DT). These chemically cross-linked C₆₀ films are capable of stable binding the Ag or Au nanoclusters. Optical properties of the obtained nanostructured hybrid films were investigated by both reflectance spectroscopy and spectral ellipsometry within the spectral range 1.55 to 5.0 eV at various angles of incidence. From the spectral dependences of the extinction coefficient in the region of optical absorption edge, the physical nature of the fundamental allowed direct band-gap transitions between HOMOLUMO states Eg, the optical absorption edge near the intrinsic transition Eo, and exponential tail of the density-of-states caused by defects have been determined. Influence of chemical modification and decoration of metal nanoparticles on the above mentioned parameters has been analyzed. uk_UA
dc.description.sponsorship Financial support from the National Autonomous University of Mexico (grant DGAPA IN 103009) and from the National Council of Science and Technology of Mexico (grant CONACYT 56420) is greatly appreciated. V. M.-L. is grateful to DGAPA for a postdoctoral fellowship. uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Effect of chemical modification of thin C₆₀ fullerene films on the fundamental absorption edge uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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