Model of heterotransistor with quantum dots

dc.contributor.author	Timofeyev, V.I.
dc.contributor.author	Faleyeva, E.M.
dc.date.accessioned	2017-05-29T13:19:43Z
dc.date.available	2017-05-29T13:19:43Z
dc.date.issued	2010
dc.identifier.citation	Model of heterotransistor with quantum dots/ V.I. Timofeyev, E.M. Faleyeva // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 186-188. — Бібліогр.: 4 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 73.40.-c, 85.35.Be
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118231
dc.description.abstract	Heterostructure transistors with quantum dots (QD) are now very perspective devices because of their higher velocities of electrons in the channel. Simulation results for concentration and carrier velocity distributions depending on the QD size, concentration and location were presented in this paper. It is shown that presence of QD in the channel causes a significant increase of current. Also, QD location and concentration influence to the output characteristics of transistor was established.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Model of heterotransistor with quantum dots	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA