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dc.contributor.author |
Misiuk, A. |
|
dc.contributor.author |
Barcz, A. |
|
dc.contributor.author |
Ulyashin, A. |
|
dc.contributor.author |
Antonova, I.V. |
|
dc.contributor.author |
Prujszczyk, M. |
|
dc.date.accessioned |
2017-05-29T12:56:29Z |
|
dc.date.available |
2017-05-29T12:56:29Z |
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dc.date.issued |
2010 |
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dc.identifier.citation |
Hydrogen gettering in annealed oxygen-implanted silicon/ A. Misiuk, A. Barcz, A. Ulyashin, I.V. Antonova, M. Prujszczyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 161-165. — Бібліогр.: 9 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
|
dc.identifier.other |
PACS 52.40.Hf, 61.05.C-, 68.37.Ps, 82.80.Ms |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/118217 |
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dc.description.abstract |
Hydrogen gettering by buried layers formed in oxygen-implanted silicon (Si:O
prepared by O²⁺ implantation at the energy 200 keV and doses 10¹⁴ and 10¹⁷ cm⁻²) was
investigated after annealing of Si:O at temperatures up to 1570 K, including also
processing under enhanced hydrostatic pressure, up to 1.2 GPa. Depending on processing
conditions, buried layers containing SiO₂₋x clusters and/or precipitates were formed. To
produce hydrogen-rich Si:O,H structures, Si:O samples were subsequently treated in RF
hydrogen plasma. As determined using secondary ion mass spectrometry, hydrogen was
accumulated in sub-surface region as well as within implantation-disturbed areas. It has
been found that hydrogen was still present in Si:O,H structures formed by oxygen
implantation with the dose D = 10⁷ cm⁻² even after post-implantation annealing up to
873 K. It is concluded that hydrogen accumulation within the disturbed areas in Si:O as
well as in SOI structures can be used for recognition of defects. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Hydrogen gettering in annealed oxygen-implanted silicon |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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