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dc.contributor.author |
Bilevych, Ye.O. |
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dc.contributor.author |
Boka, A.I. |
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dc.contributor.author |
Darchuk, L.O. |
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dc.contributor.author |
Gumenjuk-Sichevska, J.V. |
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dc.contributor.author |
Sizov, F.F. |
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dc.contributor.author |
Boelling, O. |
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dc.contributor.author |
Sulkio-Cleff, B. |
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dc.date.accessioned |
2017-05-28T19:00:33Z |
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dc.date.available |
2017-05-28T19:00:33Z |
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dc.date.issued |
2004 |
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dc.identifier.citation |
Properties of CdTe thin films prepared by hot wall epitaxy / Ye.O. Bilevych, A.I. Boka, L.O. Darchuk, J.V. Gumenjuk-Sichevska, F.F. Sizov, O. Boelling, B. Sulkio-Cleff // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 129-132. — Бібліогр.: 15 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
PACS: 68.55Ac; 81.15.-z; 73.61.Ga; 78.66.Hf |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/118156 |
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dc.description.abstract |
CdTe thin films were grown on different substrates: BaF₂ (111), polished Si (100), SiO₂, bulk CdTe (110) and HgxCd₁₋xTe layers by hot wall epitaxy (HWE). Chosen temperature parame-ters and technological process of thin film fabrication provided the growth rate of about 0.03 mm/min. The current-voltage characteristics and transmission spectra were measured. X-ray diffrac-tion data (XRD) measurements were carried out as well. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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dc.title |
Properties of CdTe thin films prepared by hot wall epitaxy |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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