Compensation of hole conductivity in CdTe crystals doped with Cr

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2007, том 10
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Semicond. Physics Quantum Electronics & Optoelectronics, 2007, № 3
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dc.contributor.author	Nikonyuk, E.S.
dc.contributor.author	Zakharuk, Z.I.
dc.contributor.author	Kuchma, M.I.
dc.contributor.author	Kovalets, M.O.
dc.contributor.author	Rarenko, A.I.
dc.contributor.author	Yuriychuk, I.M.
dc.date.accessioned	2017-05-28T18:00:40Z
dc.date.available	2017-05-28T18:00:40Z
dc.date.issued	2007
dc.identifier.citation	Compensation of hole conductivity in CdTe crystals doped with Cr / E.S. Nikonyuk, Z.I. Zakharuk, M.I. Kuchma, M.O. Kovalets, A.I. Rarenko, I.M. Yuriychuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 77-79. — Бібліогр.: 8 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 61.72.Vv, 71.55.-i
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118128
dc.description.abstract	We present the results of optical and electrophysical investigations of CdTe:Cr crystals. A model explaining a considerable shift of the fundamental absorbtion edge in the crystals into the long-wave region is proposed. It is found that the doping of cadmium telluride crystals with Cr impurity leads to the introduction of deep donors with Еv + 0.19…0.32 eV	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Compensation of hole conductivity in CdTe crystals doped with Cr	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA