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Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System

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dc.contributor.author Moskvin, P.P.
dc.contributor.author Rashkovetsky, L.V.
dc.contributor.author Khodakovsky, V.V.
dc.date.accessioned 2017-05-28T17:59:30Z
dc.date.available 2017-05-28T17:59:30Z
dc.date.issued 2007
dc.identifier.citation Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System / P.P. Moskvin, L.V. Rashkovetsky, V.V. Khodakovsky // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 70-74. — Бібліогр.: 14 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS 64.90.+b
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/118126
dc.description.abstract By comparing the results of calculations concerning the dependence of the parameters of a layer on the growth conditions with and without regard for mechanical strains in the growing system, we have analyzed the influence of the elastic energy of the strained solid phase on the phase formation in the Cd–Hg–Te system. It is shown that the occurrence of elastic strains in a layer results in an insignificant reduction of the growth rate and has almost no influence on the composition of a growing layer. The ideas of coherently matched phases in the presence of elastic deformations in the system, as well as the assumption about the existence of the chemical equilibrium of phases on the interface, give rather close results as for the crystallization of the material. Both approaches describe the experimental data on the growth of layers in various temperature-time regimes quite satisfactorily uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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