Local properties of impurity and defects investigated by high pressure spectroscopy

dc.contributor.author	Grinberg, Marek
dc.date.accessioned	2017-05-28T17:53:51Z
dc.date.available	2017-05-28T17:53:51Z
dc.date.issued	2007
dc.identifier.citation	Local properties of impurity and defects investigated by high pressure spectroscopy / Marek Grinberg // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 3. — С. 28-29. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 07.35.+k, 39.30.+w, 71.20.Be, 71.20.Eh
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118118
dc.description.abstract	Using the high-pressure spectroscopy, the pressure shifts of the luminescence related to the d-d transitions in transition metal ions and d-f transitions in rare earth ones, which interact with the nearest neighbor host ions of dielectrics, are investigated. The results are obtained for Ti³⁺, Ce³⁺, Pr³⁺, and Cr³⁺ ions in various lattices.	uk_UA
dc.description.sponsorship	The research presented in this paper has been supported by the Polish State Committee for Scientific Research by grant No. 2P03 B057 23.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Local properties of impurity and defects investigated by high pressure spectroscopy	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA