New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET

dc.contributor.author	Merabtine, N.
dc.contributor.author	Amourache, S.
dc.contributor.author	Saidi, Y.
dc.contributor.author	Zaabat, M.
dc.contributor.author	Kenzai, Ch.
dc.date.accessioned	2017-05-28T14:36:43Z
dc.date.available	2017-05-28T14:36:43Z
dc.date.issued	2003
dc.identifier.citation	New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET / N. Merabtine, S. Amourache, Y. Saidi, M. Zaabat, Ch. Kenzai // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 404-410. — Бібліогр.: 11 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 85.30.De
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118052
dc.description.abstract	New nonlinear model for simulating physical and geometrical parameters to determine the junctions capacities of "the Gallium Arsenide Metal Semiconductor Field Effect Transistor" GaAs MESFET are represented in this paper. Non linear variations of the bias and gate-source and gate-drain capacities have been found. A simulated values show excellent agreement with experimental results.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA