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періодичних видань НАН України
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Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 3
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| dc.contributor.author | Valakh, M.Ya. | |
| dc.contributor.author | Strelchuk, V.V. | |
| dc.contributor.author | Kolomys, O.F. | |
| dc.contributor.author | Hartnagel, H.L. | |
| dc.contributor.author | Sigmund, J. | |
| dc.date.accessioned | 2017-05-28T09:02:53Z | |
| dc.date.available | 2017-05-28T09:02:53Z | |
| dc.date.issued | 2003 | |
| dc.identifier.citation | Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures / M.Ya. Valakh, V.V. Strelchuk, O.F. Kolomys, H.L. Hartnagel, J. Sigmund // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 287-293. — Бібліогр.: 34 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS: 63.22.+m, 72.10.Di, 78.30.-j | |
| dc.identifier.uri | http://dspace.nbuv.gov.ua/handle/123456789/118031 | |
| dc.description.abstract | Intersubband plasmon-phonon excitations in InAs/AlSb with InSb- and AlAs-like interfaces were studied using the Raman scattering method. It was found that InSb interface is characterized by a decreasing concentration and increasing mobility of 2D electrons in InAs quantum wells. In the case of AlAs interface at the heterojunction quantum well - barrier, the formation of AlSb₁₋xAsx solid solution takes place. Revealed are considerable concentration changes for 2D electrons at low temperatures in dependency on the excitation quantum energy. | uk_UA |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.title | Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures | uk_UA |
| dc.type | Article | uk_UA |
| dc.status | published earlier | uk_UA |
