Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6
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Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 3
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dc.contributor.author	Glinchuk, K.D.
dc.contributor.author	Litovchenko, N.M.
dc.contributor.author	Strilchuk, O.N.
dc.date.accessioned	2017-05-28T08:49:56Z
dc.date.available	2017-05-28T08:49:56Z
dc.date.issued	2003
dc.identifier.citation	Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide / K.D. Glinchuk, N.M. Litovchenko, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 3. — С. 274-277. — Бібліогр.: 10 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 71.55. E; 78.55. E
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118029
dc.description.abstract	An analysis of the 4.2 K exciton luminescence spectra of semi-insulating GaAs crystals with different concentrations of shallow acceptors (С) and donors (Si) is given. As a result, the 4.2 K capture coefficients of free excitons by shallow neutral acceptors [bA₀X = (4 ± 2) 10⁻⁸ cm³/s] and donors [bD₀X= (1.5 ± 0.8) 10⁻⁷ cm³/s] are found and also an estimate of the capture coefficient of free excitons by ionized shallow donors was made .	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA