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Investigation of electron-phonon interaction in bulk and nanostructured semiconductors

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dc.contributor.author Yaremko, A.M.
dc.contributor.author Yukhymchuk, V.O.
dc.contributor.author Dzhagan, V.M.
dc.contributor.author Valakh, M.Ya.
dc.contributor.author Azhniuk, Yu.M.
dc.contributor.author Baran, J.
dc.contributor.author Ratajczak, H.
dc.contributor.author Drozd, M.
dc.date.accessioned 2017-05-27T09:44:41Z
dc.date.available 2017-05-27T09:44:41Z
dc.date.issued 2007
dc.identifier.citation Investigation of electron-phonon interaction in bulk and nanostructured semiconductors / A.M. Yaremko, V.O. Yukhymchuk, V.M. Dzhagan, M.Ya. Valakh, Yu.M. Azhniuk, J. Baran, H. Ratajczak, M. Drozd // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 2. — С. 1-5. — Бібліогр.: 13 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS 63.20.Dj, 73.40.Lq
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/117861
dc.description.abstract In this paper, the problem of electron-phonon interaction (EPI) innsemiconductor crystals and quantum dots (QDs) is considered. It is shown that the model of strong EPI developed for organic molecular crystals can be successfully applied to bulk and nanosized semiconductors. The idea of the approach proposed here is to describe the experimental Raman (or absorption) spectra containing the phonon replicas theoretically by varying the EPI constant. The main parameter of the theoretical expression describing the experimental spectrum is the ratio of EPI constant to the frequency of the corresponding phonon mode. Based on the experimental and theoretical results, we have found that decreasing the size of CdSxSe₁₋x QDs embedded in borosilicate glass matrix results in some enhancement of electron-phonon interaction. uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Investigation of electron-phonon interaction in bulk and nanostructured semiconductors uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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