Наукова електронна бібліотека
періодичних видань НАН України

Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts

Репозиторій DSpace/Manakin

Показати простий запис статті

dc.contributor.author Sachenko, A.V.
dc.contributor.author Belyaev, A.E.
dc.contributor.author Boltovets, N.S.
dc.contributor.author Kapitanchuk, L.M.
dc.contributor.author Klad’ko, V.P.
dc.contributor.author Konakova, R.V.
dc.contributor.author Kuchuk, A.V.
dc.contributor.author Korostinskay, T.V.
dc.contributor.author Pilipchuk, A.S.
dc.contributor.author Sheremet, V.N.
dc.contributor.author Mazur, Yu.I.
dc.contributor.author Ware, M.E.
dc.contributor.author Salamo, G.J.
dc.date.accessioned 2017-05-26T18:58:53Z
dc.date.available 2017-05-26T18:58:53Z
dc.date.issued 2013
dc.identifier.citation Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts / A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, L.M. Kapitanchuk, V.P. Klad’ko, R.V. Konakova, A.V. Kuchuk, T.V. Korostinskaya, A.S. Pilipchuk, V.N. Sheremet, Yu.I. Mazur, M.E. Ware, G.J. Salamo // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 4. — С. 313-321. — Бібліогр.: 32 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS 73.40.Cg, 73.40.Ns, 85.40.-e
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/117817
dc.description.abstract We present the results of structural and morphological investigations of interactions between phases in the layers of Au-Pd-Ti-Pd-n⁺-GaN contact metallization that appear at rapid thermal annealing (RTA). It is shown that formation of ohmic contact occurs in the course of RTA at Т = 900°C due to formation of titanium nitride. We studied experimentally and explained theoretically the temperature dependence of contact resistivity ρс(Т) of ohmic contacts in the 4.2-380 K temperature range. The ρс(Т) curve was shown to flatten out in the 4.2-50 K range. As temperature grew, ρс decreased exponentially. The results obtained enabled us to conclude that current flow has field nature at saturation of ρс(Т) and the thermofield nature in the exponential part of ρс(Т) curve. uk_UA
dc.description.sponsorship The Ukrainian coauthors had a support from the State Target Scientific and Technical Program of Ukraine “Nanotechnologies and nanomaterials” for 2010-2014. uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Mechanism of current flow and temperature dependence of contact resistivity in Au-Pd-Ti-Pd-n⁺ -GaN ohmic contacts uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


Файли у цій статті

Ця стаття з'являється у наступних колекціях

Показати простий запис статті

Пошук


Розширений пошук

Перегляд

Мій обліковий запис