Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures

Домашня сторінка
→
Фізико-технічні та математичні науки
→
Відділення фізики і астрономії
→
Semiconductor Physics Quantum Electronics & Optoelectronics
→
Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13
→
Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 1
→
Переглянути статтю

dc.contributor.author	Veleschuk, V.P.
dc.contributor.author	Lyashenko, O.V.
dc.contributor.author	Vlasenko, Z.K.
dc.contributor.author	Kysselyuk, M.P.
dc.date.accessioned	2017-05-26T15:41:11Z
dc.date.available	2017-05-26T15:41:11Z
dc.date.issued	2010
dc.identifier.citation	Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures / V.P. Veleschuk, O.V. Lyashenko, Z.K. Vlasenko, M.P. Kysselyuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 79-83. — Бібліогр.: 13 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 43.35+d, 43.50+y, 72.70+m, 73.50.TD, 78.60.Fi, 78.66.Fd
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117747
dc.description.abstract	It was shown that in the GaAsP/GaP and InGaN/GaN heterostructures during current passage redistribution of electroluminescence intensity on the structure surface takes place simultaneously with radiation of acoustic emission. Local (on surface area) fluctuations of electroluminescence intensity are observed together with general degradation of electro-physical parameters.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA