Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
Electrical properties of MIS structures with silicon nanoclusters
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 2
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| dc.contributor.author | Bunak, S.V. | |
| dc.contributor.author | Ilchenko, V.V. | |
| dc.contributor.author | Melnik, V.P. | |
| dc.contributor.author | Hatsevych, I.M. | |
| dc.contributor.author | Romanyuk, B.N. | |
| dc.contributor.author | Shkavro, A.G. | |
| dc.contributor.author | Tretyak, O.V. | |
| dc.date.accessioned | 2017-05-26T13:09:03Z | |
| dc.date.available | 2017-05-26T13:09:03Z | |
| dc.date.issued | 2011 | |
| dc.identifier.citation | Electrical properties of MIS structures with silicon nanoclusters / S.V. Bunak, V.V. Ilchenko, V.P. Melnik, I.M. Hatsevych, B.N. Romanyuk, A.G. Shkavro, O.V. Tretyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 241-246. — Бібліогр.: 10 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS 72.20.Ee, 73.40.Qv | |
| dc.identifier.uri | http://dspace.nbuv.gov.ua/handle/123456789/117722 | |
| dc.description.abstract | The theoretical and experimental investigations of electrical properties of the Al-SiO₂-( − ncsSi -SiO₂-Si structures grown using high temperature annealing SiOx, x < 2, have been carried out. It has been experimentally found that the Al-SiO₂-( − ncsSi )-SiO₂-Si structures with the tunnel dielectric layer revealed the effect of dynamic memory. Electric properties and parameters of the interface states located between − ncsSi and SiO₂ were studied in detail by measuring of current-voltage, capacitance-voltage, and thermally stimulated current characteristics. | uk_UA |
| dc.description.sponsorship | This work was supported by Grant №M/90–2010 of Ministry for Education and Science of Ukraine. | uk_UA |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.title | Electrical properties of MIS structures with silicon nanoclusters | uk_UA |
| dc.type | Article | uk_UA |
| dc.status | published earlier | uk_UA |
