The kinetic of point defect transformation during the annealing process in electron-irradiated silicon

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14
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Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 2
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dc.contributor.author	Gaidar, G.P.
dc.contributor.author	Dolgolenko, A.P.
dc.contributor.author	Litovchenko, P.G.
dc.date.accessioned	2017-05-26T12:47:42Z
dc.date.available	2017-05-26T12:47:42Z
dc.date.issued	2011
dc.identifier.citation	The kinetic of point defect transformation during the annealing process in electron-irradiated silicon / G.P. Gaidar, A.P. Dolgolenko, P.G. Litovchenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 213-221. — Бібліогр.: 32 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 61.72.Cc, Ji; 61.80.Fe, 61.82.Fk
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117707
dc.description.abstract	The A-centers (VO) annealing and transformation of precursors to form stable СiОi defects during these processes are described. It was found the necessity to take into account annihilation of vacancy type defects with the interstitial type mobile defects to describe the annealing of defects. It was shown that the energies of migration for vacancy (V) and interstitial carbon atoms Сi that are defined by the degree of their localization in silicon lattice at the temperature close to 550 K are equal Emv = 1.1 eV and Emc = 1.16 eV, accordingly.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	The kinetic of point defect transformation during the annealing process in electron-irradiated silicon	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA