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dc.contributor.author |
Kovalyuk, Z.D. |
|
dc.contributor.author |
Khandozhko, A.G. |
|
dc.contributor.author |
Lastivka, G.I. |
|
dc.contributor.author |
Samila, A.P. |
|
dc.date.accessioned |
2017-05-26T12:31:29Z |
|
dc.date.available |
2017-05-26T12:31:29Z |
|
dc.date.issued |
2011 |
|
dc.identifier.citation |
The electric field gradient asymmetry parameter in InSe / Z.D. Kovalyuk, A.G. Khandozhko, G.I. Lastivka, A.P. Samila // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 2. — С. 164-166. — Бібліогр.: 8 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
PACS 76.60.Gv |
|
dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/117706 |
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dc.description.abstract |
The complex NQR spectra of ¹¹⁵In caused by presence of structural defects
called polytypes are observed in a monocrystalline InSe sample. Multiple ratio of
average frequencies of NQR spectra that correspond to four resonance transitions of
quadrupole nuclii with spins I = 9/2 testifies to existence of axial symmetry of the
electric field gradient in In nucleus positions inside the InSe crystal structure. The latter
is confirmed by the dependence of the NQR spectrum amplitude on the angle between
the main crystal axis c and vector of high-frequency field H₁. However, presence of a
residual intensity in the spectra at c || Н₁ can indicate the existence of crystal blocks in
bulk of the sample with weak angular misorientation. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
The electric field gradient asymmetry parameter in InSe |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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