Calculation of electron mobility and effect of dislocation scattering in GaN

dc.contributor.author	Kundu, J.
dc.contributor.author	Sarkar, C.K.
dc.contributor.author	Mallick, P.S.
dc.date.accessioned	2017-05-26T05:49:02Z
dc.date.available	2017-05-26T05:49:02Z
dc.date.issued	2007
dc.identifier.citation	Calculation of electron mobility and effect of dislocation scattering in GaN / J. Kundu, C.K. Sarkar, P.S. Mallick // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2007. — Т. 10, № 1. — С. 1-3. — Бібліогр.: 8 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 72.20.Dp, 78.35.+c
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117661
dc.description.abstract	The electron mobility of GaN has been obtained at various temperatures by the relaxation time approximation method. The effect of dislocation scattering has also been discussed and calculated alongwith other important scattering mechanisms in this material. The results agree with other available experimental and theoretical data.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Calculation of electron mobility and effect of dislocation scattering in GaN	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA