Enhanced 2D plotting method for scanning probe microscopy imaging

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14
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Semicond. Physics Quantum Electronics & Optoelectronics, 2011, № 1
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dc.contributor.author	Beketov, G.V.
dc.date.accessioned	2017-05-25T17:52:17Z
dc.date.available	2017-05-25T17:52:17Z
dc.date.issued	2011
dc.identifier.citation	Enhanced 2D plotting method for scanning probe microscopy imaging / G.V. Beketov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2011. — Т. 14, № 1. — С. 80-87. — Бібліогр.: 27 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 68.37.Ps, 81.16.-c
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117627
dc.description.abstract	An enhanced 2D plotting method for scanning probe microscopy imaging implementing a gradient-based value mapping for pseudocolor images and its application to studies of epitaxial layer surface morphology is presented. It is demonstrated that this method is capable of revealing the finest features on growth surfaces. Presence of elementary growth steps on the surface of flat-topped hillocks found on Hg₀.₈Cd₀.₂Te LPE-grown epitaxial layers, examples of cooperative effects of screw dislocations on PbTe and Hg₁₋xCdxTe epilayer growth as well as atypical surface morphology of PbTe epilayers are discussed.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Enhanced 2D plotting method for scanning probe microscopy imaging	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA