Photoelectrical analysis of n-TiO₂/p-CdTe heterojunction solar cells

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2013, том 16
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Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 1
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dc.contributor.author	Brus, V.V.
dc.contributor.author	Maryanchuk, P.D.
dc.contributor.author	Parfenyuk, O.A.
dc.contributor.author	Vakhnyak, N.D.
dc.date.accessioned	2017-05-25T15:40:49Z
dc.date.available	2017-05-25T15:40:49Z
dc.date.issued	2013
dc.identifier.citation	Photoelectrical analysis of n-TiO₂/p-CdTe heterojunction solar cells / V.V. Brus, P.D. Maryanchuk, O.A. Parfenyuk, N.D. Vakhnyak // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 37-42. — Бібліогр.: 23 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 71.55.Gs, 73.40.Lq
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117601
dc.description.abstract	Photoelectrical properties of n-TiO₂/p-CdTe heterojunction solar cells were investigated under different light conditions, taking into account the presence of series and shunt resistances. The effect of light dependent dominating charge transport mechanism based on tunnel-recombination processes at the TiO₂/CdTe heterojunction interface was taken into consideration. The width W of the space charge region of the CdTe-pTiO₂-n solar cells and consequently the concentration of uncompensated acceptors NA - ND were determined using the open-circuit method.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Photoelectrical analysis of n-TiO₂/p-CdTe heterojunction solar cells	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA