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Peculiarities of THz-electromagnetic wave transmission through the GaN films under conditions of cyclotron and optical phonon transit-time resonances

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dc.contributor.author Korotyeyev, V.V.
dc.date.accessioned 2017-05-25T14:11:46Z
dc.date.available 2017-05-25T14:11:46Z
dc.date.issued 2013
dc.identifier.citation Peculiarities of THz-electromagnetic wave transmission through the GaN films under conditions of cyclotron and optical phonon transit-time resonances / V.V. Korotyeyev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 1. — С. 18-26. — Бібліогр.: 16 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS 72.20.Dp, Ht; 85.30.-z
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/117598
dc.description.abstract The theory of THz radiation transmission through the film of compensated GaN of cubic modification under action of electric and magnetic fields has been developed. In the THz frequency range, spectra of the dynamic mobility tensor have been obtained for applied steady-state electric fields of several kV/cm and magnetic fields of several T. The spectra of transmission, reflection and loss coefficients have been analyzed for the Voigt configuration used for the applied fields. It has been shown that the transmitted wave becomes elliptically polarized, and the spectra of polarization characteristics such as ellipticity and rotation angle of the large axis of polarization ellipse were investigated under conditions of cyclotron resonance and optical phonon transit-time one. It has been found that, in certain frequency bands, polarization characteristics have the features valid for both resonances. The new optical method based on the analysis of ellipticity and rotation angle spectra is offered for determination of the low-field mobility. uk_UA
dc.description.sponsorship This work has been carried out in the framework of the Complex Program of the undamental Researches of NAS of Ukraine “Fundamental problems of nanostructured systems, materials and nanotechnology” (2010-2014) and partially supported by The State Fund for Fundamental Researches (project Ф40.2/057). uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Peculiarities of THz-electromagnetic wave transmission through the GaN films under conditions of cyclotron and optical phonon transit-time resonances uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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