Hall effect and magnetic ordering in RB₁₂

dc.contributor.author	Baranovskiy, A.E.
dc.contributor.author	Grechnev, G.E.
dc.contributor.author	Sluchanko, D.N.
dc.contributor.author	Glushkov, V.V.
dc.contributor.author	Demishev, S.V.
dc.contributor.author	Sluchanko, N.E.
dc.contributor.author	Shitsevalova, N.Yu.
dc.date.accessioned	2017-05-21T16:50:17Z
dc.date.available	2017-05-21T16:50:17Z
dc.date.issued	2009
dc.identifier.citation	Hall effect and magnetic ordering in RB₁₂ / A.E. Baranovskiy, G.E. Grechnev, N.Yu. Shitsevalova, D.N. Sluchanko, V.V. Glushkov, S.V. Demishev, N.E. Sluchanko // Физика низких температур. — 2009. — Т. 35, № 7. — С. 721-724. — Бібліогр.: 21 назв. — англ.	uk_UA
dc.identifier.issn	0132-6414
dc.identifier.other	PACS: 71.20.Eh, 72.15.Qm, 75.30.–m
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117262
dc.description.abstract	The concentration of carriers in LuB₁₂ is evaluated theoretically by applying ab initio FP-LMTO calculations. Theoretical results are found to be in agreement with high precision measurements of the Hall RH(T) coefficient which were carried out on single crystals of the rare earth dodecaborides RB₁₂ (R = Ho, Er, Tm, Lu) at temperatures 1.8–300 K. A nature of the antiferromagnetic ordering in RB₁₂ is investigated within the RKKY-like model, which was supplemented by comprehensive electronic structure calculations for paramagnetic, ferromagnetic and antiferromagnetic phases.	uk_UA
dc.description.sponsorship	Support by the RAS Program «Strongly Correlated Electrons in Semiconductors, Metals, Superconductors and Magnetic materials» and the RFBR 07-02-90902 grant is acknowledged.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України	uk_UA
dc.relation.ispartof	Физика низких температур
dc.subject	Электронные свойства проводящих систем	uk_UA
dc.title	Hall effect and magnetic ordering in RB₁₂	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA