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Charge carrier self-organization in ferroelectromagnetic semiconductors Eu₀.₈Ce₀.₂Mn₂O₅

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dc.contributor.author Golovenchits, E.I.
dc.contributor.author Sanina, V.A.
dc.contributor.author Zalesskii, V.G.
dc.contributor.author Scheglov, M.P.
dc.date.accessioned 2017-05-20T14:28:39Z
dc.date.available 2017-05-20T14:28:39Z
dc.date.issued 2010
dc.identifier.citation Charge carrier self-organization in ferroelectromagnetic semiconductors Eu₀.₈Ce₀.₂Mn₂O₅ / E.I. Golovenchits, V.A. Sanina, V.G. Zalesskii, M.P. Scheglov // Физика низких температур. — 2010. — Т. 36, № 6. — С. 654–664. — Бібліогр.: 23 назв. — англ. uk_UA
dc.identifier.issn 0132-6414
dc.identifier.other PACS: 75.47.Lx, 76.50.+g, 77.80.–e
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/117176
dc.description.abstract The state with a giant permittivity (ε~10⁴) and ferromagnetism has been observed above 185 K (including room temperature) in single crystals of diluted semiconductor manganite–ferroelectromagnetic Eu₀.₈Ce₀.₂Mn₂O₅ in the investigations of x-ray diffraction, dielectric and magnetic properties, conductivity. X-ray diffraction study has revealed a layered superstructure along the c axis at room temperature. A model of the state with a giant ε including as-grown 2D layers with doping impurities, charge carriers, and double-exchange coupled Mn³⁺–Mn⁴⁺ ion pairs is suggested. At low temperatures these layers form isolated electrically neutral small-size 1D superlattices, in which de Haas van Alphen oscillations were observed. As temperature grows and hopping conductivity increases, the charge carrier self-organization in the crystal cause formation of a layered superstructure consisting of charged layers (with an excess Mn³⁺ concentration) alternating with dielectric layers of the initial crystal — the ferroelectricity state due to charge ordering. Ferromagnetism results from double exchange between Mn³⁺ and Mn⁴⁺ ions through of charge carriers in the charged layers. uk_UA
dc.description.sponsorship The authors would like to thank N.V. Zaitzeva for x-ray phase analysis of the samples. The work was supported by the Russian Foundation for Basic Research (grant 08-02-00077) and Presidium of RAS (Programme 03). uk_UA
dc.language.iso en uk_UA
dc.publisher Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України uk_UA
dc.relation.ispartof Физика низких температур
dc.subject Магнитоэлектрические эффекты в сегнетомагнетиках uk_UA
dc.title Charge carrier self-organization in ferroelectromagnetic semiconductors Eu₀.₈Ce₀.₂Mn₂O₅ uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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