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dc.contributor.author |
Latyshev, Yu.I. |
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dc.date.accessioned |
2017-05-20T06:52:02Z |
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dc.date.available |
2017-05-20T06:52:02Z |
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dc.date.issued |
2012 |
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dc.identifier.citation |
Comparison of phase slippage processes in Josephson
junctions and in charge density wave stacked junctions / Yu.I. Latyshev // Физика низких температур. — 2012. — Т. 38, № 4. — С. 459–461. — Бібліогр.: 7 назв. — англ. |
uk_UA |
dc.identifier.isbn |
PACS: 75.50.+r, 71.45.Lr, 73.40.Gk |
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dc.identifier.issn |
0132-6414 |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/117126 |
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dc.description.abstract |
We discuss time–space symmetry in the processes of phase slippage in Josephson junctions and charge density
wave (CDW) stacked junctions. In Josephson junctions phase slip by 2π occurs periodically in time with a period
T above critical current with a frequency obeys Josephson relation ν = 1/T = 2eV/h, where V is the voltage
on the junction. In CDW stacks at voltage on the stack above threshold value the CDW dislocation appears in the
weakest junction of the stack. This phase dislocation corresponds to the local phase slippage by 2π. With voltage
increase a new dislocations appear forming periodic array of dislocations with a period L. The inverse spacing
1/L follows the analog of Josephson equation vF/L = 2eV/h. |
uk_UA |
dc.description.sponsorship |
The author is highly acknowledged to S.A. Brazovskii
for fruitful discussions. The work has been supported by
RFBR grant No 11-02-01379-a and RAS programs. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
uk_UA |
dc.relation.ispartof |
Физика низких температур |
|
dc.subject |
Квантовые когерентные эффекты в сверхпроводниках и новые материалы |
uk_UA |
dc.title |
Comparison of phase slippage processes in Josephson junctions and in charge density wave stacked junctions |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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