Doped nanoparticles for optoelectronics applications

dc.contributor.author	Godlewski, M.
dc.contributor.author	Wolska, E.
dc.contributor.author	Yatsunenko, S.
dc.contributor.author	Opalińska, A.
dc.contributor.author	Fidelus, J.
dc.contributor.author	Łojkowski, W.
dc.contributor.author	Zalewska, M.
dc.contributor.author	Kłonkowski, A.
dc.contributor.author	Kuritsyn, D.
dc.date.accessioned	2017-05-15T04:59:42Z
dc.date.available	2017-05-15T04:59:42Z
dc.date.issued	2009
dc.identifier.citation	Doped nanoparticles for optoelectronics applications / M. Godlewski, E. Wolska, S. Yatsunenko // Физика низких температур. — 2009. — Т. 35, № 1. — С. 64-69. — Бібліогр.: 28 назв. — англ.	uk_UA
dc.identifier.other	PACS: 81.07.Wx, 78.47.–p, 78.55.–m, 78.55.Hx
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/116764
dc.description.abstract	Nanoparticles of wide band gap materials doped with transition metal ions or rare earth ions are intensively studied for their possible applications in a new generation of light sources for an overhead illumination. In this work we discuss mechanisms of emission enhancement in nanoparticles doped with rare earth or/and transition metal ions. Arguments are presented that phosphors of nanosize may emit light more efficiently and thus be applied in practical optoelectronic devices.	uk_UA
dc.description.sponsorship	This work was partly supported by grant No 1 P03B 090 30 of MEiN, Poland	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України	uk_UA
dc.relation.ispartof	Физика низких температур
dc.subject	XVII Уральская международная зимняя школа по физике полупроводников	uk_UA
dc.title	Doped nanoparticles for optoelectronics applications	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA