Vlasenko, O.I.; Babentsov, V.M.; Vlasenko, Z.K.; Ponedilok, A.V.; Kurilo, I.V.; Rudyj, I.O.; Kremenitskiy, V.V.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 1998)
By using the method of VPE CdMnTe-CdMnHgTe, CdZnTe-CdZnHgTe heterocompositions were fabricated. Increase of their photo-sensitivity in comparison with the CdTe-CdHgTe structure is explained by removal of deformation stresses ...