Zhuchenko, Z.Ya.; Tarasov, G.G.; Lavorik, S.R.; Mazur, Yu.I.; Valakh, M.Ya.; Kissel, H.; Masselink, W.T. ; Mueller, U.; Walther, C.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
Pseudomorphic strained-layer AlxGa₁₋xAs/InyGa₁₋yAs/GaAs heterostructures have been studied by means of photoluminescence and Raman scattering. It is established the correlation between the photoluminescence line shape ...