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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 4 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 4 за назвою

Сортувати за: Порядок: Результатів:

  • Sheichenko, D.M.; Pokropivny, A.V.; Pokropivny, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Electronic structure of the boron nitride rings and fullerene-like BN-molecules (the fulborenes) are calculated using MNDO, AM1, Extended Huckel, INDO and ab initio (STO-3G) methods. The fulborene B⁶⁰N⁶⁰ is confirmed as ...
  • Fedorov, A.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Calculative method based on the Riccatti type differential equation was tested for simulation of low angle X-ray diffraction patterns from the one-dimensionally ordered multilayer. Some peculiarities of diffraction were ...
  • Popov, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    This review comprises modern publications devoted to problems of development and manufacturing photovoltaic solar energy converters (solar cells) based on block multicrystalline silicon (poly-Si). Methods of growing ...
  • Alexeyev, C.N.; Soskin, M.S.; Volyar, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Any small external perturbation on an ideal round optical fiber induces cross - section deformation and transforms eigen guided vortices into generic vortex fields, which can change their structure and angular momentum. ...
  • Shcherbak, L.; Feychuk, P.; Plevachuk, Yu.; Dong, Ch.; Sklyarchuk, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Shear viscosity (h) measurements of CdTe and CdTe + 2 at% In melts were performed using a cup viscometer up to 1403 K. The h(T) dependencies obtained during slow heating and cooling (Vh/c = = 10-15 K/h) show hysteresys ...
  • Baranskii, P.I.; Babich, V.M.; Venger, E.F.; Dotsenko, Yu.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The magnetic field dependencies Dr^/r0 = f(H) were investigated for phosphorus-doped n-Si crystals at a temperature of 77.4 K in classical strong magnetic fields up to 200 kOe. We revealed and discuss some distinctions in ...
  • Vakulenko, O.V.; Kondratenko, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Measurements of the photoconductivity (PC) and photomagnetic effect (PME) spectra of crystalline silicon were carried out for the sample under the non-uniform bend deformation. This deformation causes a decrease of the ...
  • Zagoruiko, Yu.A.; Kovalenko, N.O.; Fedorenko, O.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Thermostable power sensors for continuous and pulsed periodic laser IR radiation are developed. Manufactured are scale models for a multifunctional optical element which combines the functions of transmitting radiation ...

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