Semenova, G.N.; Venger, E.F.; Korsunska, N.O.; Klad’ko, V.P.; Borkovska, L.V.; Semtsiv, M.P.; Sharibaev, M.B.; Kushnirenko, V.I.; Sadofyev, Yu.G.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
Optical and structural properties of undoped ZnSe epilayers with thickness ranging from 0.5 to 2 mm grown by molecular beam epitaxy on GaAs (001) substrates have been investigated by depth resolved optical and X-ray methods. ...