Nazarov, A.N.; Osiyuk, I.N.; Tiagulskyi, S.I.; Lysenko, V.S.; Tyagulskyy, I.P.; Torbin, V.N.; Omelchuk, V.V.; Nazarova, T.M.; Rebohle, L.; Skorupa, W.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2009)
In this paper, we explore the electrophysical and electroluminescence (EL)
properties of thermally grown 350 nm thick SiO₂ layers co-implanted with Si⁺
and C⁺
ions. The implanting fluencies were chosen in such a way ...