Gaidar, G.P.; Dolgolenko, A.P.; Litovchenko, P.G.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
The A-centers (VO) annealing and transformation of precursors to form stable
СiОi defects during these processes are described. It was found the necessity to take into
account annihilation of vacancy type defects with ...