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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2011, том 14 за назвою

Сортувати за: Порядок: Результатів:

  • The electric field gradient asymmetry parameter in InSe 
    Kovalyuk, Z.D.; Khandozhko, A.G.; Lastivka, G.I.; Samila, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The complex NQR spectra of ¹¹⁵In caused by presence of structural defects called polytypes are observed in a monocrystalline InSe sample. Multiple ratio of average frequencies of NQR spectra that correspond to four ...
  • The kinetic of point defect transformation during the annealing process in electron-irradiated silicon 
    Gaidar, G.P.; Dolgolenko, A.P.; Litovchenko, P.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The A-centers (VO) annealing and transformation of precursors to form stable СiОi defects during these processes are described. It was found the necessity to take into account annihilation of vacancy type defects with ...
  • The new approach to identification of film reflecting holographic marks 
    Kostyukevych, S.O.; Muravsky, L.I.; Fitio, V.M.; Voronyak, T.I.; Shepeliavyi, P.E.; Kostyukevych, K.V.; Moskalenko, N.L.; Pogoda, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The new approach for creation of film reflecting holographic marks for optical security is proposed. Such marks are replicas of a reflecting master hologram recorded on a chalcogenide glass layer. To receive the master ...
  • The role of copper in bifacial CdTe based solar cells 
    Khrypunov, G.; Meriuts, A.; Shelest, T.; Deineko, N.; Klyui, N.; Avksentyeva, L.; Gorbulik, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    We present an innovative back contact for CdTe solar cell by the application of a transparent conducting oxide, typically ITO, as a back electrical contact on CdTe/CdS photovoltaic devices that acts as a free-Cu stable ...
  • Thin films CdS/CdTe solar cells with different activation processes base layer 
    Khrypunov, G.S.; Shelest, T.N.; Li, T.N.; Meriuts, A.V.; Kovtun, N.A.; Makarov, A.V.; Avksentyeva, L.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Shown in this work is the possibility to create industrial technology for production of solar cells FTO/CdS/CdTe. The technology includes annealing in freon processing step for activation of cadmium telluride base layers ...
  • Transformations of microdefect structure in silicon crystals under the influence of weak magnetic field 
    Vladimirova, T.P.; Kyslovs’kyy, Ye.M.; Molodkin, V.B.; Olikhovskii, S.I.; Koplak, O.V.; Kochelab, E.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Quantitative characterization of complex microdefect structures in annealed silicon crystals (1150 °С, 40 h) and their transformations after exposing for one day in a weak magnetic field (1 T) has been performed by ...
  • Tunneling current via dislocations in InAs and InSb infrared photodiodes 
    Sukach, A.V.; Tetyorkin, V.V.; Krolevec, N.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Carrier transport mechanisms are investigated in InAs and InSb infrared photodiodes. The photodiodes were prepared by thermal diffusion of Cd and ion implantation of Be into InAs and InSb single-crystal substrates of ...
  • Wavelet analysis of Jones-matrix images corresponding to polycrystalline networks of biological crystals in diagnostics of tuberculosis 
    Zabolotna, N.I.; Balanetska, V.O.; Telenga, O.Yu.; Ushenko, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Determined in this work are analytical interrelations between orientations of optical axes and birefringence of biological crystals as well as characteristic values of elements in the Jones matrix for flat layers of ...
  • X-ray study of dopant state in highly doped semiconductor single crystals 
    Shul’pina, I.L.; Kyutt, R.N.; Ratnikov, V.V.; Prokhorov, I.A.; Bezbakh, I.Zh.; Shcheglov, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    Using Si(As, P, B) and GaSb(Si) study, possibilities of X-ray diffraction methods for diagnostics of highly doped semiconductor crystals in characterization of dopant state – whether it is in the crystals in the form of ...

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