Luchenko, A.I.; Melnichenko, M.M.; Svezhentsova, K.V.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
. Nanostructured silicon layers (3–60 nm) have been formed upon substrates of
monocrystalline silicon with a very large area (100 cm2
), multicrystalline and
metallurgical silicon by stain etching. We studied optical ...