Sghaier, H.; Bouzaiene, L.; Sfaxi, L.; Maaref, H.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
In this study, we look at the advantages of (111) GaAs substrate over (001)
one, when used to grow Hall devices by MBE. In top of that, we explore the consequence
of a modified design of modulation doping pseudomorphic ...