Sukach, A.; Tetyorkin, V.; Voroschenko, A.; Tkachuk, A.; Kravetskii, M.; Lucyshyn, I.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
The linearly-graded p-n junctions were prepared by diffusion of cadmium into
n-InSb(100) substrate with the electron concentration n ~ 1.6*10¹⁵ cm⁻³ at the
temperature T = 77 K. Passivation and protection of mesa structures ...