Michailovska, K.V.; Indutnyi, I.Z.; Shepeliavyi, P.E.; Dan’ko, V.A.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
The effect of nickel silicide interlayer on the intensity of photoluminescence (PL) from Si nanoclusters (nc) in normally deposited and obliquely deposited in vacuum SiOx/Ni/Si structures have been studied using spectral ...