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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2014, № 3 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2014, № 3 за назвою

Сортувати за: Порядок: Результатів:

  • Pekar bipolaron and the virial theorem (arbitrary coupling) 
    Kashirina, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The work is devoted to issues related with implementation of the virial theorem for one-center bipolaron. The virial theorem expressions have been obtained for an electron system with Coulomb interactions in the phonon ...
  • Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm 
    Dobrovolskyi, Yu.; Pidkamin, L.; Brus, V.; Kuzenko, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    A mathematical model of the construction of silicon photodiode based on epitaxial structure enabling to regulate the absorption edge of silicon in the long-wave spectral range is presented. The suggested model allows ...
  • Publication Ethics and Publication Malpractice Statement 
    Автор відсутній (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    All editors, reviewers and authors, should be familiarized and take into account the Publication Ethics and Publication Malpractice Statement of the international journal “Semiconductor Physics, Quantum Electronics ...
  • Radiation-induced optical darkening and oxidation effects in As₂S₃ glass 
    Kavetskyy, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    The long-wave shift of fundamental optical absorption edge with decreasing the sample’s transparency in the saturation region in the As₂S₃ bulk glass (2 mm thick) due to radiation treatment by ⁶⁰Co y-quanta with the average ...
  • Structural and optical studies of (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films deposited at different technological conditions 
    Studenyak, I.P.; Neimet, Yu.Yu.; Rati, Y.Y.; Buchuk, M.Yu.; Kökényesi, S.; Daróci, L.; Bohdan, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    (Ag₃AsS₃)₀.₆(As₂S₃)₀.₄ thin films were deposited upon a quartz substrate by rapid thermal evaporation at temperatures 1050, 1200, and 1350 °C. Structural studies of the as-deposited thin films were carried out by scanning ...
  • The growth of weakly coupled graphene sheets from silicon carbide powder 
    Kiselov, V.S.; Lytvyn, P.M.; Nikolenko, A.S.; Strelchuk, V.V.; Stubrov, Yu.Yu.; Tryus, M.; Belyaev, A.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    A simple method for production of weakly coupled graphene layers by hightemperature sublimation of polycrystalline SiC is presented. The method allows manufacturing carbon-based composite with a high content of weakly ...
  • Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing 
    Steblova, O.V.; Evtukh, A.A.; Bratus’, O.I.; Fedorenko, L.L.; Voitovych, M.V.; Lytvyn, O.S.; Gavrylyuk, O.O.; Semchuk, O.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Oxide-assisted growth of Si nanocrystals includes deposition of a siliconenriched SiOx film at the first stage and annealing at the second one. The ion-plasma sputtering method has been used for deposition of the SiOx ...

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