Syngayivska, G.I.; Korotyeyev, V.V.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
High-field electron transport has been studied in crossed electric and magnetic fields in bulk GaN with doping of 10¹⁶ cm⁻³ and compensation around 90% at the low lattice temperature (30 K). The electron distribution ...